Growth and characterization of Ga1-xCrxN with high Cr content grown on ZnO templates

被引：17

作者：

Kim, JJ ^{[1
]}

Makino, H ^{[1
]}

Chen, PP ^{[1
]}

Suzuki, T ^{[1
]}

Oh, DC ^{[1
]}

Ko, HJ ^{[1
]}

Chang, JH ^{[1
]}

Hanada, T ^{[1
]}

Yao, T ^{[1
]}

机构：

[1] Tohoku Univ, Mat Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303281

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have grown Ga1-xCrxN epilayer films with high Cr content up to 10.1% on ZnO templates. The c-axis lattice constant is systematically contracted with increasing Cr content according to high resolution X-ray diffraction measurement. We have observed the coexistence of ferromagnetic and paramagnetic components in Ga1-xCrxN. Magnetic measurements have shown that the paramagnetic component is increased with increasing Cr content. (C) 2003 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2869 / 2873

页数：5

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