New precursors for chemical vapor deposition of iridium

被引:36
作者
Xu, CY
Baum, TH
机构
[1] Adv Delivery & Chem Syst Ltd, Danbury, CT 06810 USA
[2] Univ Delaware, Dept Chem, Newark, DE 19716 USA
关键词
D O I
10.1021/cm980346x
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The synthesis and characterization of new iridium beta-diketonate Lewis base adducts, [(beta-diketonate)(IrL)-L-I] and their use as precursors for CVD of Ir were reported. These monomeric species exhibit excellent volatility and stability. Iridium films were formed by CVD from (hfac)Ir-I(1,5-COD) in hydrogen onto various substrates at temperatures over the range 250-350 degrees C. These complexes represent a novel class of precursors for CVD of Ir and IrO2 films and for the formation of electrodes for ferroelectric memories.
引用
收藏
页码:2329 / +
页数:4
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