New precursors for chemical vapor deposition of iridium

被引：36

作者：

Xu, CY

Baum, TH

机构：

[1] Adv Delivery & Chem Syst Ltd, Danbury, CT 06810 USA

[2] Univ Delaware, Dept Chem, Newark, DE 19716 USA

来源：

CHEMISTRY OF MATERIALS | 1998年 / 10卷 / 09期

关键词：

D O I：

10.1021/cm980346x

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The synthesis and characterization of new iridium beta-diketonate Lewis base adducts, [(beta-diketonate)(IrL)-L-I] and their use as precursors for CVD of Ir were reported. These monomeric species exhibit excellent volatility and stability. Iridium films were formed by CVD from (hfac)Ir-I(1,5-COD) in hydrogen onto various substrates at temperatures over the range 250-350 degrees C. These complexes represent a novel class of precursors for CVD of Ir and IrO2 films and for the formation of electrodes for ferroelectric memories.

引用

页码：2329 / +

页数：4

共 15 条

[11] Characterization of Pt thin films deposited by metallorganic chemical vapor deposition for ferroelectric bottom electrodes [J].