Phase transition in ferroelectric SrBi2Ta2O9 thin films with change of heat-treatment temperature

被引：53

作者：

Osaka, T ^{[1
]}

Sakakibara, A

Seki, T

Ono, S

Koiwa, I

Hashimoto, A

机构：

[1] Waseda Univ, Dept Appl Chem, Kagami Mem Lab Mat Sci & Technol, Shinjuku Ku, Tokyo 169, Japan

[2] Waseda Univ, Adv Res Ctr Sci & Engn, Shinjuku Ku, Tokyo 169, Japan

[3] Oki Elect Ind Co Ltd, Res & Dev Grp, Hachioji, Tokyo 193, Japan

[4] Tokyo Ohka Ind Co Ltd, Dept Res & Dev, Kanagawa 25301, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 02期

关键词：

ferroelectric thin film; SrBi2Ta2O9; bismuth-layer-structure; pyrochlore; heat-treatment temperature; phase transition; chemical liquid deposition; all-alkoxide precursor solution;

D O I：

10.1143/JJAP.37.597

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Changes in the composition and the crystal structure of micro-grains have been studied using transmission electron microscopy (TEM) and energy dispersive X-ray microanalysis in order to clarify the phase formation of ferroelectric SrBi2Ta2O9 (SBT) with heat-treatment at 650-750 degrees C. Micrograins crystallized at 650 degrees C begin to change to bismuth-layer-structure-family (BLSF) grains at temperatures exceeding 700 degrees C, and form pure-BLSF phase grains at 800 degrees C, Hence, a micrograins phase exists in thin films at 650-750 degrees C and we determined that the bismuth composition in these grains decreases. Using selected diffraction and high-resolution TEM, we found that a pyrochlore phase was formed in the bismuth-poor micrograins that were heat treated at 750 degrees C, The formation of pyrochlore made pure-phase BLSF difficult to obtain.

引用

页码：597 / 601

页数：5

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