A geometrical unification of the theories of NBTI and HCI time-exponents and its implications for ultra-scaled planar and surround-gate MOSFETs

被引：72

作者：

Kufluoglu, H ^{[1
]}

Alam, MA ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A unification of time-exponents for Negative Bias Temperature Instability (NBTI) and Hot Carrier Injection (HCI) is established under the geometric interpretation of interface trap generation. Resolving the fundamental inconsistencies, a numerical reaction-diffusion (R-D) model that agrees with recent measurements is developed. The implications regarding the degradations of future SLib-100 nm planar and surround-gate MOSFETs are presented.

引用

页码：113 / 116

页数：4

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