Sensing characteristics of tin-doped ZnO thin films as NO2 gas sensor

被引：434

作者：

Shishiyanu, ST ^{[1
]}

Shishiyanu, TS ^{[1
]}

Lupan, OI ^{[1
]}

机构：

[1] Tech Univ Moldova, Dept Microelect & Semicond Devices, MD-2004 Kishinev, Moldova

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2005年 / 107卷 / 01期

关键词：

successive ionic layer adsorption and reaction (SILAR); rapid photothermal processing (RPP); Sn-doped zinc oxide film; NO2; sensor;

D O I：

10.1016/j.snb.2004.10.030

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

NO2 gas sensor was fabricated by successive ionic layer adsorption and reaction (SILAR) technique and rapid photothermal processing (RPP) of the Sn-doped ZnO film. The experimental results shows that tin doping of zinc oxide thin films improve the sensor element sensitivity to 1.5 ppm NO2 in air and downshift the operating temperature. The influence of variation of Sn concentration in the chemical bath and the RPP temperature on NO2 sensitivity of thin film sensor elements was investigated in this work. Higher sensitivity was obtained at 5-10 at.% tin concentration in the solution of ions and RPP temperature of 550-650 degrees C. Increasing the Sn concentration in doped ZnO samples more than 10 at.% as well as decreasing the oxygen partial pressure leads to the NO, gas sensitivity decrease. It looks promising to use the inexpensive tin-doped zinc oxide thin films obtained by SILAR method and RPP in smart gas sensing devices that are able to recognize gas species in low concentrations and are demanded for continuous environmental monitoring. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：379 / 386

页数：8

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