Low-temperature full wafer adhesive bonding

被引：180

作者：

Niklaus, F ^{[1
]}

Enoksson, P ^{[1
]}

Kälvesten, E ^{[1
]}

Stemme, G ^{[1
]}

机构：

[1] Royal Inst Technol, Dept Signals Sensors & Syst, S-10044 Stockholm, Sweden

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2001年 / 11卷 / 02期

关键词：

D O I：

10.1088/0960-1317/11/2/303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have systematically investigated the influence of different bonding parameters on void formation in a low-temperature adhesive bonding process. As a result of these studies we present guidelines for void free adhesive bonding of 10 cm diameter wafers. We have focused on polymer coatings with layer thicknesses between 1 mum and 18 mum. The tested polymer materials were benzocyclobutene (BCE) from Dow Chemical, a negative photoresist (ULTRA-i 300) and a positive photoresist (S1818) from Shipley, a polyimide (HTR3) from Arch Chemical and two different polyimides (PI2555 and PI2610) from DuPont. The polymer material, the banding pressure and the pre-curing time and temperature for the polymer significantly influence void formation at the bond interface. High bonding pressure and optimum pre-curing times/temperatures counteract void formation. We present the process parameters to achieve void-free bonding with the BCB coating and with the ULTRA-i 300 photoresist coating as adhesive materials. Excellent void-free and strong bonds have been achieved by using BCB as the bonding material which requires a minimum bonding temperature of 180 degreesC.

引用

页码：100 / 107

页数：8

共 20 条

[1]

ALVINO WM, 1995, PLASTICS ELECT MAT P

[2]

ANDERGROEN S, 1997, P TRANSD 1997 CHIC U, P629

[3]

BOOTH E, 1995, ELECTROCHEM SOC 1995, V957, P201

[4] A low-cost substrate transfer technology for fully integrated transceivers [J].

Dekker, R ;

van Deurzen, MHWA ;

van der Einden, WTA ;

Maas, HGR ;

Wagemans, AG .

PROCEEDINGS OF THE 1998 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1998, :132-135

[5]

den Besten C., 1992, Proceedings. IEEE Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots(Cat. No.92CH3093-2), P104, DOI 10.1109/MEMSYS.1992.187699

[6] FUSING SILICON-WAFERS WITH LOW MELTING TEMPERATURE GLASS [J].

FIELD, LA ;

MULLER, RS .

SENSORS AND ACTUATORS A-PHYSICAL, 1990, 23 (1-3) :935-938

[7]

FRAZIER AB, 1996, P MIDW S CIRC SYST, P505

[8]

Glasgow IK, 1999, SENSOR MATER, V11, P269

[9]

Han A., 2000, Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308), P414, DOI 10.1109/MEMSYS.2000.838553

[10] Low temperature nafion bonding of silicon wafers [J].

Ilic, B ;

Neuzil, P ;

Stanczyk, T ;

Czaplewski, D ;

Maclay, GJ .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 1999, 2 (02) :86-87

← 1 2 →