Thermally oxidized AlN thin films for device insulators

被引：36

作者：

Chowdhury, EA ^{[1
]}

Kolodzey, J ^{[1
]}

Olowolafe, JO ^{[1
]}

Qiu, G ^{[1
]}

Katulka, G ^{[1
]}

Hits, D ^{[1
]}

Dashiell, M ^{[1
]}

vanderWeide, D ^{[1
]}

Swann, CP ^{[1
]}

Unruh, KM ^{[1
]}

机构：

[1] UNIV DELAWARE,DEPT PHYS & ASTRON,NEWARK,DE 19716

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 20期

关键词：

D O I：

10.1063/1.118980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural, optical, and electronic properties of an insulating material prepared by the thermal oxidation of AlN thin films on Si have been studied by a number of different experimental techniques. The thermal oxidation at 1100 degrees C of reactively sputtered AlN films on Si wafers was found to result in the formation of an oxide with a relative Al to O concentration near Al2O3 with small amounts of incorporated N. The structure of the AlO:N oxide could be varied between amorphous and polycrystalline, depending on the preparation conditions, and the oxide surface was found to be approximately three time smoother than the as-sputtered ALN films, Metal-oxide-silicon capacitors had an oxide charge density of about 10(11) cm(-2), capacitance-voltage characteristics similar to pure SiO2, and a dielectric constant of 12.4. Infrared measurements yielded a refractive index of 3.9. These results indicate that thermally oxidized AlN films show promise as insulating structures for many integrated circuit applications, particularly for the case of III-V and group III-nitride based semiconductors. (C) 1997 American Institute of Physics.

引用

页码：2732 / 2734

页数：3

共 10 条

[1] STUDY OF THE OXIDATION OF ALUMINUM NITRIDE COATINGS AT HIGH-TEMPERATURE [J].