Wafer bonding by Ni-induced crystallization of amorphous silicon

被引：4

作者：

Chao, CP ^{[1
]}

Wu, YCS ^{[1
]}

Lee, TL ^{[1
]}

Wang, YH ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 9A期

关键词：

wafer bonding; amorphous silicon; metal-induced crystallization of amorphous silicon; nickel and electric field;

D O I：

10.1143/JJAP.42.5527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Wafer bonding by Ni-induced crystallization of amorphous silicon was investigated. It was found that wafers can be bonded through the crystallization of amorphous silicon at temperatures below 550 degreesC. Moreover, when 250 V was applied across the stacked samples, the bonding temperatures could be decreased to as low as 350 degreesC.

引用

页码：5527 / 5530

页数：4

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