Metal-induced crystallization of amorphous silicon

被引：137

作者：

Yoon, SY

Park, SJ

Kim, KH

Jang, J ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

[2] Kyung Hee Univ, TFTLCD Natl Lab, Seoul 130701, South Korea

来源：

THIN SOLID FILMS | 2001年 / 383卷 / 1-2期

关键词：

metal-induced crystallization; silicide mediated crystallization; polycrystalline silicon;

D O I：

10.1016/S0040-6090(00)01790-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the Ni-silicide mediated crystallization of hydrogenated amorphous silicon (a-Si:H) in the presence of an electric field. The NiSi2 precipitates were formed at temperatures less than 400 degreesC and act as nuclei sites in the initial stage of thermal annealing. Needlelike Si crystallites are grown as a result of the migration of NiSi2 precipitates in the a-Si:H network. The crystallization speed of the a-Si:H is greatly enhanced in an electric field and thus crystallization temperature is lowered. The a-Si:H was fully crystallized at 500 degreesC within 10 min. A poly-Si TFT using the Ni-SMC poly-Si exhibited a field effect mobility of 120 cm(2)/Vs, a threshold voltage of - 1.5 V and a sub-threshold slope of 0.5 V/dec. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：34 / 38

页数：5

共 12 条

[1] SILICIDE FORMATION AND SILICIDE-MEDIATED CRYSTALLIZATION OF NICKEL-IMPLANTED AMORPHOUS-SILICON THIN-FILMS [J].