Frequency-dependent interface capacitance of Al-Al2O3-Al tunnel junctions

被引:33
作者
McCarthy, KT [1 ]
Arnason, SB [1 ]
Hebard, AF [1 ]
机构
[1] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
关键词
D O I
10.1063/1.123005
中图分类号
O59 [应用物理学];
学科分类号
摘要
Four-terminal ac impedance measurements have been used to characterize Al-Al2O3-Al tunnel-junction capacitors over the frequency range of 10 Hz-100 kHz. The insulating barriers are thin enough to assure that the response can be modeled by a frequency-dependent interface capacitance in parallel with a frequency-independent tunnel junction resistor R-o. The data reveal no sign of loss peaks down to 10 Hz and the impedance curves for a single junction, annealed to give different tunnel-junction resistance, collapse onto a single curve when R-o is used as a scaling parameter. The loss mechanism is ascribed to interface traps and is found to give an unusual asymptotic phase angle response when the real and imaginary parts of the complex capacitance are plotted against each other. (C) 1999 American Institute of Physics. [S0003-6951(99)05002-0].
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页码:302 / 304
页数:3
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