Growth optimization and electrical characteristics of VO2 films on amorphous SiO2/Si substrates

被引：45

作者：

Youn, DH ^{[1
]}

Lee, JW ^{[1
]}

Chae, BG ^{[1
]}

Kim, HT ^{[1
]}

Maeng, SL ^{[1
]}

Kang, KY ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Basic Res Lab, Taejon 305350, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 03期

关键词：

D O I：

10.1063/1.1637935

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to fabricate an electronic device, we have optimized growth conditions of VO2 films on amorphous SiO2/Si structure substrates by pulsed laser deposition. The phase of VO2 films observed consisted of multiphases such as VO2, V2O5, and V2O3. The correlation between phase changes and growth conditions of VO2 films was analyzed. Also, the electrical characteristics of VO2-based three terminal devices, attributed to structural and phase changes, are discussed. VO2 films under optimal growth conditions have a change in resistivity of the order of 10(2) near a critical temperature, T-c=340 K. Furthermore, an abrupt jump in current was observed when an electric field was applied to the three terminal device in the VO2-based SiO2/Si structure. The source-drain voltage, in which the abrupt current jump occurred, changed with application of a gate electric field. (C) 2004 American Institute of Physics.

引用

页码：1407 / 1411

页数：5

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