Organic transistors with high thermal stability for medical applications

被引:313
作者
Kuribara, Kazunori [1 ,2 ,3 ]
Wang, He [4 ]
Uchiyama, Naoya [1 ]
Fukuda, Kenjiro [1 ]
Yokota, Tomoyuki [1 ]
Zschieschang, Ute [5 ]
Jaye, Cherno [6 ]
Fischer, Daniel [6 ]
Klauk, Hagen [5 ]
Yamamoto, Tatsuya [7 ]
Takimiya, Kazuo [7 ]
Ikeda, Masaaki [8 ]
Kuwabara, Hirokazu [8 ]
Sekitani, Tsuyoshi [1 ,2 ,3 ]
Loo, Yueh-Lin [4 ]
Someya, Takao [1 ,2 ,3 ,9 ]
机构
[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan
[2] Univ Tokyo, Dept Elect & Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan
[3] Japan Sci & Technol Agcy, Bunkyo Ku, Tokyo 1130032, Japan
[4] Princeton Univ, Dept Chem & Biol Engn, Princeton, NJ 08544 USA
[5] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany
[6] NIST, Mat Measurement Lab, Gaithersburg, MD 20899 USA
[7] Hiroshima Univ, Dept Appl Chem, Fac Engn, Higashihiroshima 7398527, Japan
[8] Nippon Kayaku Co Ltd, Chiyoda Ku, Tokyo 1028172, Japan
[9] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
来源
NATURE COMMUNICATIONS | 2012年 / 3卷
基金
美国国家科学基金会;
关键词
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; LANGMUIR-BLODGETT MONOLAYERS; GALLIUM-ARSENIDE; TERPHENYLDITHIOL; SPECTROSCOPY; ORIENTATION; ELECTRONICS; PENTACENE; CIRCUITS;
D O I
10.1038/ncomms1721
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The excellent mechanical flexibility of organic electronic devices is expected to open up a range of new application opportunities in electronics, such as flexible displays, robotic sensors, and biological and medical electronic applications. However, one of the major remaining issues for organic devices is their instability, especially their thermal instability, because low melting temperatures and large thermal expansion coefficients of organic materials cause thermal degradation. Here we demonstrate the fabrication of flexible thin-film transistors with excellent thermal stability and their viability for biomedical sterilization processes. The organic thin-film transistors comprise a high-mobility organic semiconductor, dinaphtho[2,3-b:2', 3'-f]thieno [3,2-b]thiophene, and thin gate dielectrics comprising a 2-nm-thick self-assembled monolayer and a 4-nm-thick aluminium oxide layer. The transistors exhibit a mobility of 1.2 cm(2)V(-1)s(-1) within a 2 V operation and are stable even after exposure to conditions typically used for medical sterilization.
引用
收藏
页数:7
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