Molecule-based chemical vapor growth of aligned SnO2 nanowires and branched SnO2/V2O5 heterostructures

被引:113
作者
Mathur, Sanjay [1 ,2 ]
Barth, Sven [1 ,2 ]
机构
[1] Leibniz Inst New Mat, D-66123 Saarbrucken, Germany
[2] Wuerzburg Univ, Dept Inorgan Chem, D-97074 Wurzburg, Germany
关键词
chemical vapor deposition; nanowires; oxides; tin; vanadium;
D O I
10.1002/smll.200700213
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Oriented growth of Tin Oxide semiconducting nanowires (NW) was achieved on a single-crystal rutile surface following a molecule-assisted chemical vapor deposition approach. Heteroepitaxy of SnO2 on TiO2 was governed by the catalyzing function of gold, while Sn4+-O species liberated during the decomposition of the alkoxide precursor are either alloyed with the gold nanoparticles due to their molten state under growth conditions, or diffuse to energetically favored nucleation sites at the solid-liquid interface. The templating influence of gold films and clusters were explored to achieve site-specific and individually grown NWs. The results show the unique potential of molecule-based CVD for the controlled formation of oriented one-dimensional structures and a viable extension of the approach to complex hierarchical structures.
引用
收藏
页码:2070 / 2075
页数:6
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