SiC and GaN high-voltage power switching devices

The present status of high-voltage SIC and GaN power semiconductor switching devices is reviewed. The choice and design of several key device structures are discussed. The performance expectations of the major two- and three-terminal unipolar and bipolar devices in SiC and GaN are presented and compared. The progress in high-voltage power device experimental demonstration is reviewed. The material and process technology issues that need to be addressed for device commercialization are discussed.