Pulsed laser deposition of bismuth in the presence of different ambient atmospheres

被引：20

作者：

Boffoue, MO ^{[1
]}

Lenoir, B ^{[1
]}

Scherrer, H ^{[1
]}

Dauscher, A ^{[1
]}

机构：

[1] Ecole Mines, INPL,UHP, Phys Mat Lab, CNRS,UMR 7556, F-54042 Nancy, France

来源：

THIN SOLID FILMS | 1998年 / 322卷 / 1-2期

关键词：

bismuth; pulsed laser deposition; scanning electron microscopy; crystal growth;

D O I：

10.1016/S0040-6090(97)00912-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bismuth thin films have been deposited at 200 degrees C on glass substrates using the pulsed laser deposition (PLD) technique with a high energy density (8 J/cm(2)). Influences on the film morphologies, topographies and crystallographic structures of different background atmospheres during deposition (vacuum, low He or N-2 pressures (10(-6)-10(-7) mbar)) introduced in the chamber either in a dynamic way or under static conditions were investigated. Film growth is processed differently, depending on ambient atmosphere. Well-crystallized, polycrystalline bismuth films presenting completely random-oriented crystallites are obtained whereas more conventional deposition techniques favour c-axis orientation. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：132 / 137

页数：6

共 33 条

[1] INTERFACE STATES IN BI/BI1-XSBX HETEROJUNCTIONS [J].

AGASSI, D ;

CHU, TK .

APPLIED PHYSICS LETTERS, 1987, 51 (26) :2227-2229

[2] ELECTRICAL-RESISTIVITY OF THIN BISMUTH-FILMS [J].

BABA, S ;

SUGAWARA, H ;

KINBARA, A .

THIN SOLID FILMS, 1976, 31 (03) :329-335

[3]

BOFFOUE MO, IN PRESS

[4] STUDY OF THE STRUCTURE AND PROPERTIES OF THE ELASTORESISTANCE OF BISMUTH THIN-LAYERS [J].

BUTTO, C ;

BERTY, J .

THIN SOLID FILMS, 1983, 101 (04) :357-368

[5] INTERFACE STRUCTURE BETWEEN BI AND CDTE IN MOLECULAR-BEAM EPITAXIALLY GROWN BI/CDTE AND BI/BI1-XSBX SUPERLATTICES [J].

CHEN, J ;

DIVENERE, A ;

YI, XJ ;

HOU, CL ;

WANG, HC ;

WONG, GK ;

KETTERSON, JB .

JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (12) :1255-1259

[6] QUANTUM SIZE EFFECT IN ULTRA-THIN BISMUTH-FILMS [J].

CHU, HT .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1987, 48 (09) :845-851

[7] Pulsed laser deposition of Bi2Te3 thin films [J].

Dauscher, A ;

Thomy, A ;

Scherrer, H .

THIN SOLID FILMS, 1996, 280 (1-2) :61-66

[8] Optical properties of pulsed laser deposited bismuth films [J].

deSande, JCG ;

Missana, T ;

Afonso, CN .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (12) :7023-7027

[9] COMPOSITION VARIATIONS IN PULSED-LASER-DEPOSITED Y-BA-CU-O THIN-FILMS AS A FUNCTION OF DEPOSITION PARAMETERS [J].

FOOTE, MC ;

JONES, BB ;

HUNT, BD ;

BARNER, JB ;

VASQUEZ, RP ;

BAJUK, LJ .

PHYSICA C, 1992, 201 (1-2) :176-182

[10]

GAPONOV SV, 1980, SOV PHYS SEMICOND+, V14, P873

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