Thermally annealed Ni/n-GaAs(Si)/In Schottky barrier diodes

We have identically prepared as many as eight Ni/n-GaAs/In Schottky barrier diodes (SBDs) using an n-type GaAs substrate with a doping density of about 7.3 x 10(15) cm(-3). The thermal stability of the Ni/n-GaAs/In Schottky diodes has been investigated by means of current-voltage (I-V) techniques after annealed for 1 min in N-2 atmosphere from 200 to 700 degrees C. For Ni/n-GaAs/In SBDs, the Schottky barrier height Phi(b) and ideality factor it values range from 0.853 +/- 0.012 eV and 1.061 +/- 0.007 (for as-deposited sample) to 0.785 +/- 0.002 eV and 1.209 +/- 0.005 (for 600 degrees C annealing). The ideality factor values remained about unchanged up to 400 degrees C annealing. The I-V characteristics of the devices deteriorated at 700 degrees C annealing. (C) 2007 Elsevier B.V. All rights reserved.