Cu2ZnSnS4 solar cells prepared with sulphurized dc-sputtered stacked metallic precursors

被引：80

作者：

Fernandes, P. A. ^{[1
,2
]}

Salome, P. M. P. ^{[1
]}

da Cunha, A. F. ^{[1
]}

Schubert, Bjoern-Arvid ^{[3
]}

机构：

[1] Univ Aveiro, Dept Fis I3N, P-3810193 Aveiro, Portugal

[2] Inst Politecn Porto, Inst Super Engn Porto, Dept Fis, P-4200072 Oporto, Portugal

[3] Helmholtz Zentrum Berlin Mat & Energie GmbH Solar, D-14109 Berlin, Germany

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 21期

关键词：

Cu2ZnSnS4; CZTS; Sputtering; Sulphurization; Thin film; Solar cell; Raman; THIN-FILMS;

D O I：

10.1016/j.tsf.2010.12.035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present work we report the details of the preparation and characterization results of Cu2ZnSnS4 (CZTS) based solar cells. The LLB absorber was obtained by sulphurization of dc magnetron sputtered Zn/Sn/Cu precursor layers. The morphology, composition and structure of the absorber layer were studied by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction and Raman scattering. The majority carrier type was identified via a hot point probe analysis. The hole density, space charge region width and band gap energy were estimated from the external quantum efficiency measurements. A MoS2 layer that formed during the sulphurization process was also identified and analyzed in this work. The solar cells had the following structure: soda lime glass/Mo/CZTS/CdS/i-ZnO/ZnO:Al/Al grid. The best solar cell showed an open-circuit voltage of 345 mV, a short-circuit current density of 4.42 mA/cm(2), a fill factor of 44.29% and an efficiency of 0.68% under illumination in simulated standard test conditions: AM 1.5 and 100 mW/cm(2). (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：7382 / 7385

页数：4

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