Growth, branching, and kinking of molecular-beam epitaxial ⟨110⟩GaAs nanowires

被引：108

作者：

Wu, ZH ^{[1
]}

Mei, X

Kim, D

Blumin, M

Ruda, HE

Liu, JQ

Kavanagh, KL

机构：

[1] Univ Toronto, Ctr Adv Nanotechnol, Toronto, ON M5S 3E4, Canada

[2] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 16期

关键词：

D O I：

10.1063/1.1618018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs nanowires were grown on GaAs (100) substrates by vapor-liquid-solid growth. About 8% of these nanowires grew in <110> directions with straight, Y-branched or L-shaped morphologies. The role of strain-induced reduction in surface free energy is discussed as a possible factor contributing to the evolution of <110> nanowires. Kinking and branching is attributed to growth instabilities resulting from equivalent surface free energies for <110> growth directions. Transmission electron microscopy verified that <110> nanowires are defect free. (C) 2003 American Institute of Physics.

引用

页码：3368 / 3370

页数：3

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