Growth model and morphology of Ti3SiC2 grains

被引：19

作者：

Tang, K ^{[1
]}

Wang, CA ^{[1
]}

Huang, Y ^{[1
]}

Zan, QF ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 222卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

Ti3SiC2; Ti6C octahedron; growth rate; morphology;

D O I：

10.1016/S0022-0248(00)00870-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A model of the growth and morphology of Ti3SiC2 grains is presented in this work. In the growth of Ti3SiC2 grains, Ti6C octahedron can be recognized as an integrated growth unit and the linking modes of Ti6C octahedra (such as sharing planes, edges, or apexes) have strong influence on the growth behavior and morphology of Ti3SiC2 Some experimental phenomena such as preferred orientation of the {1 1 (2) over bar 0} plane in CVD method, and some hexagonal sections in the morphology of the fractured surface can be well interpreted using our model. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：130 / 134

页数：5

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