Time-resolved Fourier-transform infrared and visible luminescence spectroscopy of photoexcited porous silicon

被引：26

作者：

Wang, JP ^{[1
]}

Song, L ^{[1
]}

Zou, BS ^{[1
]}

El-Sayed, MA ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Chem & Biochem, Laser Dynam Lab, Atlanta, GA 30332 USA

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.59.5026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to identify the luminescent centers in aged porous silicon, both the time-resolved vibration spectra in the 750-2000-cm(-1) region and the visible luminescence spectra are studied for the same sample in the 0-440-mu s time domain. Laser excitation gives rise to emission characteristics of the porous silicon as well as strong bleach in the infrared spectrum in the region of the ground-stale silicon-oxygen stretching vibration frequencies at 1100 and 1235 cm(-1). In addition, new transient absorption bands appear in this region as a result of the laser excitation. Three characteristic Lifetimes in the decay of the bleach band at 1235 cm(-1) are observed on the 1-, 10-, and 100-mu s time scale. These are similar to the observed decay times of the photoluminescence from porous silicon. These results suggest that the emitting centers in aged porous silicon are trapped excitation sites in an inhomogeneously defected oxidized silicon surface. [S0163-1829(99)09207-3].

引用

页码：5026 / 5031

页数：6

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