High purity isotopically enriched 29Si and 30Si single crystals:: Isotope separation, purification, and growth

被引：74

作者：

Itoh, KM ^{[1
]}

Kato, J

Uemura, M

Kaliteevski, AK

Godisov, ON

Devyatych, GG

Bulanov, AD

Gusev, AV

Kovalev, ID

Sennikov, PG

Pohl, HJ

Abrosimov, NV

Riemann, H

机构：

[1] Keio Univ, CREST JST, Dept Appl Phys & Phys Informat, Yokohama, Kanagawa 2238522, Japan

[2] Sci & Tech Ctr Centrotech ECP Electrochem Plant, St Petersburg 195272, Russia

[3] RAS, Inst Chem High Pure Subst, Nizhnii Novgorod 603600, Russia

[4] VITCON Projectconsult GmbH, D-07743 Jena, Germany

[5] Inst Crystal Growth, D-12489 Berlin, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 10期

关键词：

silicon; isotope; bulk crystal growth; Hall effect;

D O I：

10.1143/JJAP.42.6248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the successful isotope separation and bulk single crystal growth of Si-29 and Si-30 stable isotopes. The isotopic enrichments of the Si-29 and Si-30 single crystals determined by mass spectrometry are 99.23% and 99.74%, respectively. Both crystals have the electrically active net-impurity concentration less than 10(15) cm(-3). Thanks to the result of this work and the Si-28 crystals we grew previously, high quality single crystals of every stable Si isotope (Si-28, Si-29, and Si-30) have been made available for a wide variety of basic research and industrial applications.

引用

页码：6248 / 6251

页数：4

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