Effects of oxygen pressure on the growth of pulsed laser deposited ZnO films on Si(001)

被引：123

作者：

Kim, SS ^{[1
]}

Lee, BT ^{[1
]}

机构：

[1] Chonnam Natl Univ, Dept Mat Sci & Engn, Photon & Elect Thin Film Lab, Kwangju 500757, South Korea

来源：

THIN SOLID FILMS | 2004年 / 446卷 / 02期

关键词：

deposition process; growth mechanism; laser ablation; zinc oxide;

D O I：

10.1016/j.tsf.2003.09.057

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO thin films were prepared on Si(0 0 1) substrates using a pulsed laser deposition (PLD) technique and then their growth and properties were investigated particularly as a function of ambient O-2 pressure during film growth. It was found that the microstructure, crystallinity, orientation and optical properties of the films grown are strongly dependent on the O-2 pressures used. Completely c-axis oriented ZnO films are grown in a low O-2 pressure regime (5 X 10(-4)-5 X 10(-2) Torr), whereas a randomly oriented film with a much lower crystallinity and a rougher grained-surface is grown at an O-2 pressure of 5 X 10(-1) Torr. This deterioration in film quality may be associated with the kinetics of atomic arrangements during deposition. Our results suggest that ambient O-2 pressure is an important processing parameter and should be optimized in a narrow regime in order to grow a ZnO film of good properties in PLD process. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：307 / 312

页数：6

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