Bond-length variation in InxGa1-xAs/InP strained epitaxial layers

被引：52

作者：

Romanato, F

De Salvador, D

Berti, M

Drigo, A

Natali, M

Tormen, M

Rossetto, G

Pascarelli, S

Boscherini, F

Lamberti, C

Mobilio, S

机构：

[1] European Synchrotron Radiat Facil, INFM, F-38043 Grenoble, France

[2] Dipartimento Fis G Galilei, Ist Nazl Fis Mat, I-35131 Padua, Italy

[3] CNR, Ist Chim Tecn Inorgan Mat Avanzati, I-35020 Padova, Italy

[4] Ist Nazl Fis Nucl, Lab Nazl Frascati, I-00044 Frascati, Italy

[5] Univ Torino, Dipartimento Chim Inorgan Fis Mat, I-10418 Turin, Italy

[6] Univ Roma Tre, Dipartimento Fis, I-00146 Roma, Italy

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.57.14619

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tensile and compressive InxGa1-xAs epilayers gram on [001] InP substrates have been analyzed by fluorescence-detected x-ray-absorption. fine structure in order to investigate the length variation suffered by Ga-As and In-As atomic bonds under epitaxial strain. A morphological and structural analysis-had previously been performed in order to select only pseudomorphic samples with high lattice quality. A clear variation of the nearest-neighbor distances proportional to the tetragonal distortion of the film has been detected. We discuss the relationship between the long- and short-range descriptions of strain accommodation in the framework of an analytical model.

引用

页码：14619 / 14622

页数：4

共 22 条

[1] LENGTH MISMATCH IN RANDOM SEMICONDUCTOR ALLOYS .1. GENERAL-THEORY FOR QUATERNARIES [J].

CAI, Y ;

THORPE, MF .

PHYSICAL REVIEW B, 1992, 46 (24) :15872-15878

[2] INTERATOMIC DISTANCE AND LOCAL ORDER IN INAS-ALSB SEMICONDUCTOR SUPERLATTICES [J].

CANOVA, E ;

GOLDMAN, AI ;

WORONICK, SC ;

KAO, YH ;

CHANG, LL .

PHYSICAL REVIEW B, 1985, 31 (12) :8308-8310

[3] Strain-induced modulations in the surface morphology of heteroepitaxial layers [J].

Cullis, AG .

MRS BULLETIN, 1996, 21 (04) :21-26

[4] X-ray-absorption spectroscopy and n-body distribution functions in condensed matter .1. Theory [J].

Filipponi, A ;

DiCicco, A ;

Natoli, CR .

PHYSICAL REVIEW B, 1995, 52 (21) :15122-15134

[5] Local analysis of structural instability in stressed lattices: Crack nucleation in a covalent solid [J].

Jayanthi, CS ;

Tang, M ;

Wu, SY ;

Cocks, JA ;

Yip, S .

PHYSICAL REVIEW LETTERS, 1997, 79 (23) :4601-4604

[6] The skeletal modes of vibration of long chain molecules [J].

Kirkwood, JG .

JOURNAL OF CHEMICAL PHYSICS, 1939, 7 (07) :506-509

[7]

KNAUF J, 1988, J CRYST GROWTH, V3, P34

[8] BOND-LENGTH RELAXATION IN ULTRATHIN INAS AND INPO0.4AS0.6 LAYERS ON INP(001) [J].

KUWAHARA, Y ;

OYANAGI, H ;

SHIODA, R ;

TAKEDA, Y ;

YAMAGUCHI, H ;

AONO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (10) :5631-5635

[9] EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE INVESTIGATION ON BURIED INASP/INP INTERFACES [J].

LAMBERTI, C ;

BORDIGA, S ;

BOSCHERINI, F ;

PASCARELLI, S ;

SCHIAVINI, GM .

APPLIED PHYSICS LETTERS, 1994, 64 (11) :1430-1432

[10] LATTICE-PARAMETERS AND LOCAL ATOMIC-STRUCTURE OF SILICON-RICH SI-GE/SI (100) FILMS [J].

MATSUURA, M ;

TONNERRE, JM ;

CARGILL, GS .

PHYSICAL REVIEW B, 1991, 44 (08) :3842-3849

← 1 2 3 →