Bond-length variation in InxGa1-xAs/InP strained epitaxial layers

被引：52

作者：

Romanato, F

De Salvador, D

Berti, M

Drigo, A

Natali, M

Tormen, M

Rossetto, G

Pascarelli, S

Boscherini, F

Lamberti, C

Mobilio, S

机构：

[1] European Synchrotron Radiat Facil, INFM, F-38043 Grenoble, France

[2] Dipartimento Fis G Galilei, Ist Nazl Fis Mat, I-35131 Padua, Italy

[3] CNR, Ist Chim Tecn Inorgan Mat Avanzati, I-35020 Padova, Italy

[4] Ist Nazl Fis Nucl, Lab Nazl Frascati, I-00044 Frascati, Italy

[5] Univ Torino, Dipartimento Chim Inorgan Fis Mat, I-10418 Turin, Italy

[6] Univ Roma Tre, Dipartimento Fis, I-00146 Roma, Italy

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.57.14619

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tensile and compressive InxGa1-xAs epilayers gram on [001] InP substrates have been analyzed by fluorescence-detected x-ray-absorption. fine structure in order to investigate the length variation suffered by Ga-As and In-As atomic bonds under epitaxial strain. A morphological and structural analysis-had previously been performed in order to select only pseudomorphic samples with high lattice quality. A clear variation of the nearest-neighbor distances proportional to the tetragonal distortion of the film has been detected. We discuss the relationship between the long- and short-range descriptions of strain accommodation in the framework of an analytical model.

引用

页码：14619 / 14622

页数：4