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BOND-LENGTH RELAXATION IN ULTRATHIN INAS AND INPO0.4AS0.6 LAYERS ON INP(001)

被引：22
作者：
KUWAHARA, Y
OYANAGI, H
SHIODA, R
TAKEDA, Y
YAMAGUCHI, H
AONO, M
机构：
[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN
[2] NAGOYA UNIV,DEPT MAT SCI & ENGN,NAGOYA,AICHI 46401,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 10期
关键词：
ULTRATHIN FILM; EXAFS; LOCAL STRUCTURE; BOND LENGTH RELAXATION; CRITICAL THICKNESS;
D O I：
10.1143/JJAP.33.5631
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Bond length relaxation in InAs and InP0.4As0.6 ultrathin layers on InP(001) substrates has been studied by the extended X-ray absorption fine structure using synchrotron radiation. The In-As bond lengths have been determined as a function of film thickness from 1000 Angstrom to 3 Angstrom. In ultrathin him, the In-As bond lengths in both InAs and InP0.4As0.6 alloys are shorter than the bulk value by the epitaxy-induced strain due to the lattice mismatch. It was found that on increasing the film thickness, the In-As bond lengths gradually approach the values in the bulk material. The relative variation of bond length is not dependent on the magnitude of lattice spacing, which suggests that the mechanism of relaxation is ascribed to the local strain (bond length mismatch) rather than the macroscopic average.
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页码：5631 / 5635
页数：5
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