LOCAL-STRUCTURE AROUND GA AND AS DOPED IN INP STUDIED BY FLUORESCENCE-DETECTED EXAFS

被引：26

作者：

OYANAGI, H

TAKEDA, Y

MATSUSHITA, T

ISHIGURO, T

YAO, T

SASAKI, A

机构：

[1] KYOTO UNIV,DEPT ELECT ENGN,KYOTO 606,JAPAN

[2] NATL LAB HIGH ENERGY PHYS,TSUKUBA,IBARAKI 305,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 67卷 / 05期

关键词：

Arsenic - Crystals - Metals and Alloys - Semiconducting Gallium;

D O I：

10.1016/0038-1098(84)90161-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Local structure around isoelectronic impurities (Ga:1.2×1019 cm-3, As:7.3×1019 cm-3) doped in InP has been studied by fluorescence-detected extended x-ray absorption fine structure (EXAFS) using synchrotron radiation. We find that the bond lengths of impurities in the dilute limit take values close to those in pure binary compounds, deviating from the interatomic distance of host lattice. Local distortion along the (111) direction gives rise to internal expansion or compression around impurities. Resulting structural disorder is discussed in relation to the local structure in (In,Ga)(As,P) quaternary alloys lattice-matched to InP.

引用

页码：453 / 458

页数：6

共 16 条

[1] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION [J].