Effect of wet oxidized AlxGa1-xAs layer on the interdiffusion of InGaAs/GaAs quantum wells

被引：12

作者：

Choe, JS ^{[1
]}

Ryu, SW

Choe, BD

Lim, H

机构：

[1] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea

[2] Ajou Univ, Dept Elect Engn, Suwon 442749, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 11期

关键词：

D O I：

10.1063/1.367505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of wet oxidized AlAs cap layer and AlGaAs interlayer on the thermal stability of In0.2Ga0.8As/GaAs quantum well (QW) is studied. The QW interdiffusion rate is observed to increase with the Al composition of the AlxGa1-xAs interlayer until x reaches about 0.5 and then saturate for x greater than or equal to 0.5. When the oxidation is performed at 380 degrees C for 15 min, the threshold value of iv for the enhancement of QW interdiffusion is found to be 0.3. It is also confirmed that the QW interdiffusion can only be explained when the strain effect in InGaAs is taken into account. (C) 1998 American Institute of Physics. [S0021-8979(98)02510-9].

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页码：5779 / 5782

页数：4

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