Recent progress in SiC power device developments and application studies

被引：43

作者：

Sugawara, Y ^{[1
]}

机构：

[1] Kansai Elect Power Co, Gen R&D Ctr, Amagasaki, Hyogo 661, Japan

来源：

ISPSD'03: 2003 IEEE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS PROCEEDINGS | 2003年

关键词：

D O I：

10.1109/ISPSD.2003.1225220

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent progress in SiC device developments is comprehensively surveyed and state of the art SiC power devices including diodes and switching devices are reported. The highest BVs of 19.5kV and 12.5kV are achieved for SiC pin (Bodes and SiC switching devices respectively. The smallest RonS of 1/420 and 1/230 for Si theoretical limits are achieved by SiCSBD and SiC FET respectively. New SiC bipolar devices such as the SIJFET and the SICGT have been introduced to increase the current capability under the restriction in chip size, which is due to the presence of several crystal defects. Their modules are also demonstrated. Furthermore, application studies focused on the electric power supply field such as BTB, SVG and a load leveling system are also introduced.

引用

页码：10 / 18

页数：9

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