Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements

被引：52

作者：

Ju, Sanghyun ^{[1
,2
]}

Kim, Sunkook ^{[1
,2
]}

Mohammadi, Saeed ^{[1
,2
]}

Janes, David B. ^{[1
,2
]}

Ha, Young-Geun ^{[3
,4
]}

Facchetti, Antonio ^{[3
,4
]}

Marks, Tobin J. ^{[3
,4
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[4] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 02期

基金：

美国国家科学基金会; 美国国家航空航天局;

关键词：

D O I：

10.1063/1.2830005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single ZnO nanowire (NW) transistors fabricated with self-assembled nanodielectric (SAND) and SiO(2) gate insulators were characterized by low-frequency noise and variable temperature current-voltage (I-V) measurements. According to the gate dependence of the noise amplitude, the extracted Hooge's constants (alpha(H)) are similar to 3.3x10(-2) for SAND-based devices and similar to 3.5x10(-1) for SiO(2)-based devices. Temperature-dependent I-V studies show that the hysteresis of the transfer curves and the threshold voltage shifts of SAND-based devices are significantly smaller than those of SiO(2)-based devices. These results demonstrate the improved SAND/ZnO NW interface quality (lower interface-trap states and defects) in comparison to those fabricated with SiO(2). (c) 2008 American Institute of Physics.

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页数：3

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