Ultrasmall Pt clusters for single electron tunneling studies

被引：6

作者：

Kreupl, F

Vancea, J

Risch, L

Hofmann, F

Hoffmann, H

机构：

[1] Siemens AG, ZFE T ME1

[2] Institut für Angewandte Physik, Universität Regensburg

来源：

MICROELECTRONIC ENGINEERING | 1996年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00285-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

We report on first results of self assembled Pt clusters on tap of an oxidized Al substrate, fabricated for Single Electron tunneling studies. STM investigations revealed cluster sizes ranging between 2 and 4 nm and we observed associated Coulomb Blockade gaps up to 300 meV at room temperature.

引用

收藏

页码：451 / 454

页数：4

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