Au/AuBe/Cr contact to p-ZnTe

被引：6

作者：

Chang, SJ

Chen, WR

Su, YK

Chen, JF

Lan, WH

Chiang, CI

Lin, WJ

Cherng, YT

Liu, CH

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[2] Chung Shan Inst Sci & Technol, Taoyuan 325, Taiwan

[3] Nan Jeon Jr Coll Technol & Commerce, Dept Elect Engn, Yan Hsui 737, Taiwan

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 05期

关键词：

D O I：

10.1049/el:20010190

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Au/AuBe and Au/AuBe/Cr contacts have been deposited onto the surface of p-ZnTe. It a as found that with a proper choice of Cr thickness, a low specific contact resistance of 2.0 x 10 (6)Omega cm(2) can be achieved for Au/AuBe/Cr on p-ZnTe. It was also Found that Zn outdiffusion will significantly degrade the electrical properties of the Au/AuBe contact on p-ZnTe when annealing temperature is above 300 degreesC. Conversely. Au/AuBe/Cr contact is more thermally reliable. Such a property makes Au/AuBe/Cr attractive in device application.

引用

页码：321 / 322

页数：2

共 6 条

[1]

CHANG SJ, 1998, ELECTRON LETT, V34, P1891

[2] AuBe Ohmic contacts to p-type ZnTe [J].

Lan, WH ;

Lin, WJ ;

Cheng, YC ;

Tai, K ;

Tasi, CM ;

Wu, PH ;

Cheng, KH ;

Chou, ST ;

Yang, CM ;

Cheng, YC ;

Huang, KF .

ELECTRONICS LETTERS, 1998, 34 (25) :2434-2435

[3]

MOCHIZUKI K, 1995, ELECTRON LETT, V30, P1984

[4] LOW-RESISTANCE OHMIC CONTACTS FOR P-TYPE ZNTE [J].

OZAWA, M ;

HIEI, F ;

TAKASU, M ;

ISHIBASHI, A ;

AKIMOTO, K .

APPLIED PHYSICS LETTERS, 1994, 64 (09) :1120-1122

[5] II-VI laser diode with low operating voltage and long device lifetime [J].

Sanaka, Y ;

Okuyama, H ;

Kijima, S ;

Kato, E ;

Noguchi, H ;

Ishibashi, A .

ELECTRONICS LETTERS, 1998, 34 (19) :1891-1892

[6] Formation of ohmic contacts to p-ZnTe [J].

Trexler, JT ;

Fijol, JJ ;

Calhoun, LC ;

Park, RM ;

Holloway, PH .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (09) :1474-1477

← 1 →