LOW-RESISTANCE OHMIC CONTACTS FOR P-TYPE ZNTE

被引：17

作者：

OZAWA, M

HIEI, F

TAKASU, M

ISHIBASHI, A

AKIMOTO, K

机构：

[1] Sony Corporation Research Center, Hodogayaku Yokohama 240

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 09期

关键词：

D O I：

10.1063/1.110825

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low resistance Ohmic contacts of Au(Pt)Pd to p-ZnTe were studied. The specific contact resistance of these contacts depends strongly on the annealing temperature and the Pd layer thickness. The specific contact resistance, measured by the transmission line model, is as low as 5 x 10(-6) OMEGA cm2 when a sample is annealed at 200-degrees-C. The optimum Pd layer thickness is 5-10 nm. This value of the specific contact resistance is two orders of magnitude lower than that of Au or Pt contacts to p-ZnTe. The depth profiles of these contacts were investigated by Auger electron spectroscopy. The possible role of the Pd layer is discussed.

引用

页码：1120 / 1122

页数：3

共 19 条

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J].

BERGER, HH .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&

[2] ALLOYED OHMIC CONTACTS TO GAAS [J].

BRASLAU, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :803-807

[3] COMPENSATION PHENOMENA IN GAAS IMPLANTED WITH 1 MEV SILICON IONS [J].

BRAUNSTEIN, G ;

CHEN, S ;

LEE, ST ;

ZHENG, LR ;

KO, KY ;

PETERSON, DL ;

LAWRENCE, D .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 :1032-1036

[4] GRADED BAND-GAP OHMIC CONTACT TO P-ZNSE [J].

FAN, Y ;

HAN, J ;

HE, L ;

SARAIE, J ;

GUNSHOR, RL ;

HAGEROTT, M ;

JEON, H ;

NURMIKKO, AV ;

HUA, GC ;

OTSUKA, N .

APPLIED PHYSICS LETTERS, 1992, 61 (26) :3160-3162

[5] BLUE-GREEN LASER-DIODES [J].

HAASE, MA ;

QIU, J ;

DEPUYDT, JM ;

CHENG, H .

APPLIED PHYSICS LETTERS, 1991, 59 (11) :1272-1274

[6] OHMIC CONTACTS TO P-TYPE ZNSE USING ZNTE/ZNSE MULTIQUANTUM WELLS [J].

HIEI, F ;

IKEDA, M ;

OZAWA, M ;

MIYAJIMA, T ;

ISHIBASHI, A ;

AKIMOTO, K .

ELECTRONICS LETTERS, 1993, 29 (10) :878-879

[7]

ITOH S, 1992, JPN J APPL PHYS, V31, pL1316

[8] PROPOSAL FOR THE FORMATION OF A MINORITY-CARRIER INJECTING CONTACT ON WIDE BANDGAP SEMICONDUCTORS [J].

LIU, YX ;

WANG, MW ;

MCCALDIN, JO ;

MCGILL, TC .

JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :913-917

[9] NONALLOYED OHMIC CONTACTS TO N-GAAS BY SOLID-PHASE EPITAXY OF GE [J].

MARSHALL, ED ;

ZHANG, B ;

WANG, LC ;

JIAO, PF ;

CHEN, WX ;

SAWADA, T ;

LAU, SS ;

KAVANAGH, KL ;

KUECH, TF .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :942-947

[10] WORK FUNCTION OF ELEMENTS AND ITS PERIODICITY [J].

MICHAELSON, HB .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4729-4733

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