AuBe Ohmic contacts to p-type ZnTe

被引：2

作者：

Lan, WH ^{[1
]}

Lin, WJ

Cheng, YC

Tai, K

Tasi, CM

Wu, PH

Cheng, KH

Chou, ST

Yang, CM

Cheng, YC

Huang, KF

机构：

[1] Chung Shan Inst Sci & Technol, Mat R&D Ctr, Tao Yuan 325, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[3] Natl Taiwan Ocean Univ, Inst Electroopt Sci, Keelung 202, Taiwan

[4] Chung Cheng Inst Technol, Dept Elect Engn, Tao Yuan 335, Taiwan

[5] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 25期

关键词：

D O I：

10.1049/el:19981563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ohmic contacts of AuBe to p-ZnTe show a minimum specific contact resistance of 3.0 x 10(-6) Ohm cm(2) for a p-doping level of 1.6 x 10(19) cm(-3) and at an annealing temperature of 200 degrees C. The beryllium is very effective at improving the electrical properties of p-type contacts to ZnTe.

引用

页码：2434 / 2435

页数：2

共 4 条

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