Magnetoresistance related to on-site spin correlations in the nearest neighbor hopping conductivity

被引：13

作者：

Agrinskaya, NV ^{[1
]}

Kozub, VI ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 108卷 / 06期

基金：

俄罗斯科学基金会;

关键词：

semiconductors; impurities in semiconductors; electronic transport;

D O I：

10.1016/S0038-1098(98)00358-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We consider the magnetoresistance in the nearest neighbor hopping conductivity with an account of both Hubbard and spin correlations. It is shown that no spin magnetoresistance exists for the conductivity within the lower Hubbard band. In contrast, the epsilon(2) conductivity involving the upper Hubbard band states exhibits an increase of activation energy which in high magnetic fields has a universal form mu(0)gH. The results obtained are in good agreement with existing experimental data for temperature dependent magnetoresistance in different doped materials. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：355 / 359

页数：5

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