Highly strained InGaAs/GaAs multiple quantum-wells for laser applications in the 1200-1300 nm wavelength regime

被引：31

作者：

Sundgren, P ^{[1
]}

Berggren, J ^{[1
]}

Goldman, P ^{[1
]}

Hammar, M ^{[1
]}

机构：

[1] Royal Inst Technol KTH, Dept Microelect & Informat Technol, S-16440 Kista, Sweden

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 07期

关键词：

D O I：

10.1063/1.2010615

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on metalorganic vapor-phase epitaxy growth optimization and properties of highly strained InGaAs/GaAs quantum-well (QW) structures with emission wavelength beyond 1200 nm. It is observed that a sufficiently high V/III ratio in combination with low growth temperature is critical for preserved layer integrity when increasing the strain. Multiple QWs with up to five wells are realized without any degradation in photoluminescence intensity or broad-area laser performance at an emission wavelength of 1240 nm with threshold current density below 70 A/cm(2) per well.

引用

页数：3

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