GaInAs/GaAs quantum-well growth assisted by Sb surfactant:: Toward 1.3 μm emission

被引：77

作者：

Harmand, JC ^{[1
]}

Li, LH ^{[1
]}

Patriarche, G ^{[1
]}

Travers, L ^{[1
]}

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 20期

关键词：

D O I：

10.1063/1.1751221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of highly strained GaInAs quantum wells on GaAs is investigated in the presence of Sb. Sb appears as an adequate isoelectronic surfactant: the lateral relaxation of strain is shown to be significantly delayed in comparison with a Sb-free growth. This effect is used to extend the emission wavelength of GaInAs quantum wells. We obtained a 9-nm-thick Ga0.59In0.41As0.986Sb0.008 quantum wells with smooth interfaces, emitting at 1.27 mum at room temperature. (C) 2004 American Institute of Physics.

引用

页码：3981 / 3983

页数：3

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