Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers

被引：169

作者：

Yang, X ^{[1
]}

Jurkovic, MJ ^{[1
]}

Heroux, JB ^{[1
]}

Wang, WI ^{[1
]}

机构：

[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 02期

关键词：

D O I：

10.1063/1.124311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaAsN:Sb/GaAs quantum wells (QWs) were grown by solid-source molecular beam epitaxy using a N-2 radio-frequency plasma source. Photoluminescence reveals an enhancement in the optical properties of InGaAsN/GaAs QWs by the introduction of Sb flux during growth. X-ray diffraction and reflection high-energy electron diffraction analyses indicate that Sb acts as a surfactant. This technique was used to improve the performance of long-wavelength InGaAsN laser diodes. A low-threshold current density of 520 A/cm(2) was achieved for an InGaAsN:Sb/GaAs single quantum well 1.2 mu m laser diode at room temperature under pulsed operation. (C) 1999 American Institute of Physics. [S0003-6951(99)00727-5].

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页码：178 / 180

页数：3

相关论文

共 18 条

[1] SURFACTANTS IN EPITAXIAL-GROWTH [J].

COPEL, M ;

REUTER, MC ;

KAXIRAS, E ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1989, 63 (06) :632-635

[2] GROWTH-MORPHOLOGY AND THE EQUILIBRIUM SHAPE - THE ROLE OF SURFACTANTS IN GE/SI ISLAND FORMATION [J].

EAGLESHAM, DJ ;

UNTERWALD, FC ;

JACOBSON, DC .

PHYSICAL REVIEW LETTERS, 1993, 70 (07) :966-969

[3] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].

Kondow, M ;

Uomi, K ;

Niwa, A ;

Kitatani, T ;

Watahiki, S ;

Yazawa, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275

[4] Room-temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performance [J].

Kondow, M ;

Nakatsuka, S ;

Kitatani, T ;

Yazawa, Y ;

Okai, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (11) :5711-5713

[5] 4-Monolayer-height layer-by-layer growth and increase of the critical thickness of Ge heteroepitaxy on boron-preadsorbed Si(111) surface [J].

Kumagai, Y ;

Ishimoto, K ;

Mori, R ;

Tee, KM ;

Ishibashi, T ;

Kawabe, M ;

Hasegawa, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (4B) :L476-L478

[6] GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes [J].

Larson, MC ;

Kondow, M ;

Kitatani, T ;

Nakahara, K ;

Tamura, K ;

Inoue, H ;

Uomi, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (02) :188-190

[7] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

[8] 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers [J].

Nakahara, K ;

Kondow, M ;

Kitatani, T ;

Larson, MC ;

Uomi, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (04) :487-488

[9] ELECTRONIC-STRUCTURE AND PHASE-STABILITY OF GAAS1-XNX ALLOYS [J].

NEUGEBAUER, J ;

VAN DE WALLE, CG .

PHYSICAL REVIEW B, 1995, 51 (16) :10568-10571

[10] Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine [J].

Pan, Z ;

Miyamoto, T ;

Schlenker, D ;

Sato, S ;

Koyama, F ;

Iga, K .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (11) :6409-6411