DELAYED RELAXATION BY SURFACTANT ACTION IN HIGHLY STRAINED III-V-SEMICONDUCTOR EPITAXIAL LAYERS - COMMENT

被引：31

作者：

SNYDER, CW

ORR, BG

机构：

[1] Harrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.70.1030

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A Comment on the Letter by N. Grandjean et al., Phys. Rev. Lett. 69, 796 (1992). © 1993 The American Physical Society.

引用

收藏

页码：1030 / 1030

页数：1

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[J]. PHYSICAL REVIEW LETTERS, 1989, 63 (06) : 632 - 635
[2] DELAYED RELAXATION BY SURFACTANT ACTION IN HIGHLY STRAINED III-V SEMICONDUCTOR EPITAXIAL LAYERS
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[J]. PHYSICAL REVIEW LETTERS, 1992, 69 (05) : 796 - 799
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[J]. PHYSICAL REVIEW B, 1992, 46 (15): : 9551 - 9554
[4] EFFECT OF SURFACE-TENSION ON THE GROWTH MODE OF HIGHLY STRAINED INGAAS ON GAAS(100)
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[J]. APPLIED PHYSICS LETTERS, 1993, 62 (01) : 46 - 48
[5] LOCAL DIMER EXCHANGE IN SURFACTANT-MEDIATED EPITAXIAL-GROWTH
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[J]. PHYSICAL REVIEW LETTERS, 1992, 68 (07) : 954 - 957