LOCAL DIMER EXCHANGE IN SURFACTANT-MEDIATED EPITAXIAL-GROWTH

被引:212
作者
TROMP, RM
REUTER, MC
机构
[1] IBM Research Division, Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598
关键词
D O I
10.1103/PhysRevLett.68.954
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
While the effectiveness of surfactants in suppressing islanding in Si/Ge heteroepitaxial growth has been demonstrated in previous studies, the atomic scale growth processes have remained unknown. Here we present images of the growing Si(001)/Ge surface obtained with in situ low-energy electron microscopy. From our observations we conclude that surfactant-mediated growth of Ge on Si(001) proceeds by highly local Ge incorporation with minimum surface diffusion. We propose a new two-dimer correlated exchange mechanism to explain this unusual growth mode, as well as the absence of islanding at high Ge coverage.
引用
收藏
页码:954 / 957
页数:4
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