STEP STRUCTURE AND INTERFACE MORPHOLOGY - ARSENIC ON VICINAL SILICON SURFACES

被引：31

作者：

OHNO, TR ^{[1
]}

WILLIAMS, ED ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT PHYS,COLLEGE PK,MD 20742

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584981

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：874 / 883

页数：10

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