Interdiffusion in highly strained InGaAs-QWs for high power laser diode applications

被引：13

作者：

Bugge, F ^{[1
]}

Zeimer, U ^{[1
]}

Wenzel, H ^{[1
]}

Erbert, G ^{[1
]}

Weyers, M ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochsfrequenztech, D-12489 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 272卷 / 1-4期

关键词：

metalorganic vapor-phase epitaxy; quantum wells; InGaAs; laser diodes;

D O I：

10.1016/j.jcrysgro.2004.08.050

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

With the aim of realizing laser diodes on GaAs with an emission wavelength above 1120nm, we have studied the indium incorporation behavior into highly strained pseudomorphic InGaAs-QWs grown by metalorganic vapor-phase epitaxy (MOVPE). To obtain such long wavelengths the In(x)Gal(1-x)As (x>0.3) quantum wells were grown at much lower temperature (530degreesC) than the AlGaAs cladding layers. The indium diffusion and the resulting emission wavelength shift during growth of the upper cladding layers and their dependence on growth parameters like strain compensation, quantum well composition and V/III-ratio has been studied. Laser diodes with very small far field angles were processed into broad area devices (50-200mum x 1000-4000 mum). Such devices show thermally limited output cw powers above 10W. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：531 / 537

页数：7

共 8 条

[1] LUMINESCENCE OF ALXGA1-XAS GROWN BY MOVPE [J].

ANDRE, JP ;

BOULOU, M ;

MICREAROUSSEL, A .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :192-197

[2] 12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells [J].

Bugge, F ;

Erbert, G ;

Fricke, J ;

Gramlich, S ;

Staske, R ;

Wenzel, H ;

Zeimer, U ;

Weyers, M .

APPLIED PHYSICS LETTERS, 2001, 79 (13) :1965-1967

[3] Influence of interdiffusion processes on optical and structural properties of pseudomorphic In0.35Ga0.65As/GaAs multiple quantum well structures [J].

Burkner, S. ;

Baeumler, M. ;

Wagner, J. ;

Larkins, E.C. ;

Rothemund, W. ;

Ralston, J.D. .

1996, (79)

[4] SEGREGATION AND INTERDIFFUSION OF IN ATOMS IN GAAS/INAS/GAAS HETEROSTRUCTURES [J].

KAWAI, T ;

YONEZU, H ;

OGASAWARA, Y ;

SAITO, D ;

PAK, K .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) :1770-1775

[5] Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm [J].

Tansu, N ;

Yeh, JY ;

Mawst, LJ .

APPLIED PHYSICS LETTERS, 2003, 82 (23) :4038-4040

[6] INTERDIFFUSION OF GAAS/GA1-XINXAS QUANTUM-WELLS [J].

TAYLOR, WJ ;

KUWATA, N ;

YOSHIDA, I ;

KATSUYAMA, T ;

HAYASHI, H .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) :8653-8655

[7] THE EFFECTS OF THE GROWTH TEMPERATURE ON ALXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.37) LED MATERIALS GROWN BY OM-VPE [J].

TSAI, MJ ;

TASHIMA, MM ;

MOON, RL .

JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (02) :437-446

[8] High-resolution X-ray diffraction investigation of crystal perfection and relaxation of GaAs/InGaAs/GaAs quantum wells depending on MOVPE growth conditions [J].

Zeimer, U ;

Bugge, F ;

Gramlich, S ;

Urban, I ;

Oster, A ;

Weyers, M .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1997, 19 (2-4) :369-376

← 1 →