Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm

被引：71

作者：

Tansu, N ^{[1
]}

Yeh, JY ^{[1
]}

Mawst, LJ ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Elect & Comp Engn, Reed Ctr Photon, Madison, WI 53706 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 23期

关键词：

D O I：

10.1063/1.1581978

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Extremely low threshold-current-density In0.4Ga0.6As quantum-well (QW) lasers have been realized in the 1215-1233 nm wavelength regime. The measured room-temperature threshold current density of the InGaAs QW lasers with a cavity length of 1000 m m is only 90 A/cm(2) at an emission wavelength of 1233 nm. (C) 2003 American Institute of Physics.

引用

页码：4038 / 4040

页数：3

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