12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells

被引：68

作者：

Bugge, F ^{[1
]}

Erbert, G ^{[1
]}

Fricke, J ^{[1
]}

Gramlich, S ^{[1
]}

Staske, R ^{[1
]}

Wenzel, H ^{[1
]}

Zeimer, U ^{[1
]}

Weyers, M ^{[1
]}

机构：

[1] Ferdinand braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 13期

关键词：

D O I：

10.1063/1.1405812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly strained InGaAs quantum wells were grown by metalorganic vapor-phase epitaxy. By lowering the growth temperature to 530 degreesC, a maximum photoluminescence wavelength of 1192 nm was achieved. High-power diode lasers with a maximum lasing wavelength of 1175 nm were fabricated. A continuous-wave output power of 12 W at a heat-sink temperature of 25 degreesC was obtained at a lasing wavelength of 1120 nm. (C) 2001 American Institute of Physics.

引用

页码：1965 / 1967

页数：3

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