INVESTIGATIONS ON LOW-TEMPERATURE MO-CVD GROWTH OF GAAS

[1] CHARACTERIZATION OF GAAS EPITAXIAL LAYERS GROWN IN A RADIATION HEATED MO-CVD REACTOR [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (03) : 473 - 480

[2] BRICE JC, 1977, CURR TOPICS MATER SC, V2, P571

[3] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703

[4] ROOM-TEMPERATURE LASER OPERATION OF QUANTUM-WELL GA(1-X)ALXAS-GAAS LASER-DIODES GROWN BY ORGANOMETALLUIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 295 - 297

[5] EROLOV IA, 1977, RUSSIA J PHYS CHEM, V51, P651

[6] LOW-TEMPERATURE GROWTH OF MOCVD GAAS-LAYERS AT ATMOSPHERIC-PRESSURE [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (03) : 605 - 606

[7] HEYEN M, UNPUB PROG CRYST GRO

[8] HOLOWAY H, 1967, J APPL PHYS, V38, P2893

[9] LERAUX M, 1980, J CRYST GROWTH, V48, P367

[10] LIN AL, 1977, 6TH P INT C CVD, P264

[1] CHARACTERIZATION OF GAAS EPITAXIAL LAYERS GROWN IN A RADIATION HEATED MO-CVD REACTOR [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (03) : 473 - 480

[2] BRICE JC, 1977, CURR TOPICS MATER SC, V2, P571

[3] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703

[4] ROOM-TEMPERATURE LASER OPERATION OF QUANTUM-WELL GA(1-X)ALXAS-GAAS LASER-DIODES GROWN BY ORGANOMETALLUIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 295 - 297

[5] EROLOV IA, 1977, RUSSIA J PHYS CHEM, V51, P651

[6] LOW-TEMPERATURE GROWTH OF MOCVD GAAS-LAYERS AT ATMOSPHERIC-PRESSURE [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (03) : 605 - 606

[7] HEYEN M, UNPUB PROG CRYST GRO

[8] HOLOWAY H, 1967, J APPL PHYS, V38, P2893

[9] LERAUX M, 1980, J CRYST GROWTH, V48, P367

[10] LIN AL, 1977, 6TH P INT C CVD, P264