THE EFFECTS OF THE GROWTH TEMPERATURE ON ALXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.37) LED MATERIALS GROWN BY OM-VPE

被引：24

作者：

TSAI, MJ

TASHIMA, MM

MOON, RL

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 02期

关键词：

D O I：

10.1007/BF02656687

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：437 / 446

页数：10

共 8 条

[1] LUMINESCENCE OF ALXGA1-XAS GROWN BY MOVPE [J].

ANDRE, JP ;

BOULOU, M ;

MICREAROUSSEL, A .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :192-197

[2] CHARACTERIZATION OF GAAS EPITAXIAL LAYERS GROWN IN A RADIATION HEATED MO-CVD REACTOR [J].

BENEKING, H ;

ESCOBOSA, A ;

KRAUTLE, H .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (03) :473-480

[3] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J].

DAPKUS, PD ;

MANASEVIT, HM ;

HESS, KL ;

LOW, TS ;

STILLMAN, GE .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :10-23

[4] A NEW APPROACH TO THE GETTERING OF OXYGEN DURING THE GROWTH OF GAALAS BY LOW-PRESSURE MOCVD [J].

HERSEE, SD ;

DIFORTEPOISSON, MA ;

BALDY, M ;

DUCHEMIN, JP .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :53-57

[5] OXYGEN GETTERING BY GRAPHITE BAFFLES DURING ORGANO-METALLIC VAPOR-PHASE EPITAXIAL ALGAAS GROWTH [J].

KISKER, DW ;

MILLER, JN ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :614-616

[6] OMVPE GROWTH OF ALXGA1-XAS [J].

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :42-52

[7] INCREASE IN LUMINESCENCE EFFICIENCY OF ALXGA1-XAS GROWN BY ORGANOMETALLIC VPE [J].

STRINGFELLOW, GB ;

HOM, G .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :794-796

[8]

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