Ferroelectric Na0.5K0.5NbO3 thin films by pulsed laser deposition

被引：8

作者：

Cho, CR ^{[1
]}

Grishin, A

Moon, BM

机构：

[1] Royal Inst Technol, Dept Condensed Matter Phys, SE-10044 Stockholm, Sweden

[2] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

来源：

INTEGRATED FERROELECTRICS | 2000年 / 31卷 / 1-4期

关键词：

preferential orientation; self-assembling; low loss; MFIS-diode;

D O I：

10.1080/10584580008215638

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Highly c-axis oriented single phase Na0.5K0.5NbO3 (NKN) thin films have been deposited onto polycrystalline Pt80Ir20 substrates and SiO2/Si(001) wafers using pulsed laser ablation of stoichiometric ceramic target. Strong self-assembling of NKN films along the [001] direction has been observed. Properties of NKN/Pt thin film structures have been successfully tailored by oxygen pressure control from the ferroelectric state, characterized by the remnant polarization of 12 muC/cm(2), dielectric constant epsilon similar to 520 and tan delta - 0.024 @ 100 kHz, to superparaelectric state with tan delta as low as 0.003 and epsilon = 210 with very small 1.7% dispersion in the frequency domain 0.4-100 kHz and less than 10% Variation in the temperature range 77-415 K. NKN films grown onto SiO2/Si(001) substrates show quadrupled super-lattice structure along c-axis, loss tan delta less than 0.01, and epsilon similar to 110 @ 1 MHz. C-V measure ments for Au/NKN(270nm)/SiO2/Si MFIS-diode structure yield memory window of 3.26 V at the programmable voltage of 8 V.

引用

页码：35 / 45

页数：11

共 17 条

[11] FERROELECTRIC PROPERTIES OF (K,NA)NBO3 THICK-FILMS PREPARED BY RAPID-QUENCHING [J].

TAKAHASHI, K ;

UEDA, H ;

SUZUKI, T ;

KAKEGAWA, K .

FERROELECTRICS, 1989, 95 :209-213

[12] AN EXPERIMENTAL COMPARISON OF MEASUREMENT TECHNIQUES TO EXTRACT SI-SIO2 INTERFACE TRAP DENSITY [J].

WITCZAK, SC ;

SUEHLE, JS ;

GAITAN, M .

SOLID-STATE ELECTRONICS, 1992, 35 (03) :345-355

[13] Propagation characteristics of surface acoustic waves in KNbO3/SrTiO3/Si layered structures [J].

Wu, MS ;

Shih, WC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (4A) :2192-2195

[14] HIGH CRITICAL CURRENTS IN EPITAXIAL YBA2CU3O7-X THIN-FILMS ON SILICON WITH BUFFER LAYERS [J].

WU, XD ;

INAM, A ;

HEGDE, MS ;

WILKENS, B ;

CHANG, CC ;

HWANG, DM ;

NAZAR, L ;

VENKATESAN, T ;

MIURA, S ;

MATSUBARA, S ;

MIYASAKA, Y ;

SHOHATA, N .

APPLIED PHYSICS LETTERS, 1989, 54 (08) :754-756

[15]

Yin Z, 1996, APPL PHYS LETT, V68, P2303, DOI 10.1063/1.116171

[16] GROWTH OF KNBO3 THIN-FILMS ON MGO BY PULSED-LASER DEPOSITION [J].

ZALDO, C ;

GILL, DS ;

EASON, RW ;

MENDIOLA, J ;

CHANDLER, PJ .

APPLIED PHYSICS LETTERS, 1994, 65 (04) :502-504

[17]

1999, S MAT RES SOC P FERR

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