Formation of Si clusters in electron-irradiated SiC studied by electron energy-loss spectroscopy

被引:17
作者
Asaoka, N
Muto, S [1 ]
Tanabe, T
机构
[1] Nagoya Univ, Ctr Integrated Res Sci & Engn, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Grad Sch Engn, Dept Nucl Engn, Nagoya, Aichi 4648603, Japan
关键词
electron microscopy; electron energy-loss spectroscopy; electron irradiation damage; SiC;
D O I
10.1016/S0925-9635(00)00453-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electron-irradiation damage in 6H-SiC was examined at room temperature by means of transmission electron microscopy and electron energy-loss spectroscopy (EELS). A detailed analysis of extended energy-loss fine structure (EXELFS) gave unambiguous evidence of the formation of direct Si-Si bonding after prolonged irradiation, where the sample still maintained the well-defined 6H structure, while no appreciable indication of direct C-C bonding was observed. These results suggest that C atoms should be predominantly displaced away compared to Si atoms and the residual Si atoms form small clusters. The changes in the energy-loss near-edge structure (ELNES) were consistent with the appearance of Si clusters. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1251 / 1254
页数:4
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