Formation of Si clusters in electron-irradiated SiC studied by electron energy-loss spectroscopy

被引：17

作者：

Asaoka, N

Muto, S ^{[1
]}

Tanabe, T

机构：

[1] Nagoya Univ, Ctr Integrated Res Sci & Engn, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Grad Sch Engn, Dept Nucl Engn, Nagoya, Aichi 4648603, Japan

来源：

关键词：

electron microscopy; electron energy-loss spectroscopy; electron irradiation damage; SiC;

D O I：

10.1016/S0925-9635(00)00453-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electron-irradiation damage in 6H-SiC was examined at room temperature by means of transmission electron microscopy and electron energy-loss spectroscopy (EELS). A detailed analysis of extended energy-loss fine structure (EXELFS) gave unambiguous evidence of the formation of direct Si-Si bonding after prolonged irradiation, where the sample still maintained the well-defined 6H structure, while no appreciable indication of direct C-C bonding was observed. These results suggest that C atoms should be predominantly displaced away compared to Si atoms and the residual Si atoms form small clusters. The changes in the energy-loss near-edge structure (ELNES) were consistent with the appearance of Si clusters. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1251 / 1254

页数：4

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