The temperature dependence of ion-beam-induced amorphization in beta-SiC

被引:87
作者
Weber, WJ [1 ]
Wang, LM [1 ]
机构
[1] UNIV NEW MEXICO, DEPT EARTH & PLANETARY SCI, ALBUQUERQUE, NM 87131 USA
关键词
D O I
10.1016/0168-583X(95)00722-9
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The ion-beam-induced crystalline-to-amorphous transition in monolithic beta-SiC has been studied as a function of irradiation temperature using the HVEM-Tandem Facility at Argonne National Laboratory. Specimens were irradiated with 1.5 MeV Xe+ ions over the temperature range from 40 to 550 K and the evolution of the amorphous state was followed in situ using the HVEM. At 40 K, the displacement dose for complete amorphization in P-SIC is 0.34 dpa and increases with temperature in two stages. The simultaneous recovery process associated with the high-temperature stage (above 200 K) has an activation energy of 0.097 +/- 0.019 eV. The critical temperature above which amorphization does not occur is 498 K under these irradiation conditions.
引用
收藏
页码:298 / 302
页数:5
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